Invention Grant
- Patent Title: Integrated circuit including integrated standard cell structure
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Application No.: US17561887Application Date: 2021-12-24
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Publication No.: US11973081B2Publication Date: 2024-04-30
- Inventor: Hyeon Gyu You , In Gyum Kim , Gi Young Yang , Ji Su Yu , Jin Young Lim , Hak Chul Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20190139527 2019.11.04
- Main IPC: H01L27/118
- IPC: H01L27/118 ; H01L27/02

Abstract:
An integrated circuit includes a first standard cell including a first first-type transistor, a first second-type transistor, a third second-type transistor, and a third first-type transistor, a second standard cell including a second first-type transistor, a second second-type transistor, a fourth second-type transistor and a fourth first-type transistor, a plurality of wiring layers which are disposed on the first and second standard cells and includes a first wiring layer, a second wiring layer, and a third wiring layer sequentially stacked. A source contact of the first first-type transistor and a source contact of the second first-type transistor are electrically connected through a first power rail of the plurality of wiring layers, and a source contact of the third first-type transistor and a source contact of the fourth first-type transistor are electrically connected through a second power rail of the plurality of wiring layers.
Public/Granted literature
- US20220115406A1 INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE Public/Granted day:2022-04-14
Information query
IPC分类: