Invention Grant
- Patent Title: Charge loss mitigation throughout memory device lifecycle by proactive window shift
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Application No.: US17579230Application Date: 2022-01-19
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Publication No.: US11977774B2Publication Date: 2024-05-07
- Inventor: Steven Michael Kientz , Ugo Russo , Vamsi Pavan Rayaprolu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: LOWENSTEIN SANDLER LLP
- Main IPC: G06F3/06
- IPC: G06F3/06
Abstract:
An average number of program erase cycles (PECs) for a memory device is identified. A set of trims associated with the average number of PECs is identified. One or more write trims associated with the memory device are set according to the set of trims. A write command directed to the memory device is received. The write command is executed according to the one or more write trims.
Public/Granted literature
- US20230195379A1 CHARGE LOSS MITIGATION THROUGHOUT MEMORY DEVICE LIFECYCLE BY PROACTIVE WINDOW SHIFT Public/Granted day:2023-06-22
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