Invention Grant
- Patent Title: Integrated circuit, system for and method of forming an integrated circuit
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Application No.: US17885118Application Date: 2022-08-10
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Publication No.: US11983479B2Publication Date: 2024-05-14
- Inventor: Jung-Chan Yang , Ting-Wei Chiang , Jerry Chang-Jui Kao , Hui-Zhong Zhuang , Lee-Chung Lu , Li-Chun Tien , Meng-Hung Shen , Shang-Chih Hsieh , Chi-Yu Lu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- The original application number of the division: US15792289 2017.10.24
- Main IPC: G06F30/394
- IPC: G06F30/394 ; H01L23/522 ; H01L23/528 ; H01L27/02 ; H01L27/118

Abstract:
A method of fabricating an integrated circuit includes placing a first set of conductive feature patterns on a first level, placing a second set of conductive feature patterns on a second level, placing a first set of via patterns between the second set of conductive feature patterns and the first set of conductive feature patterns, placing a third set of conductive feature patterns on a third level different from the first level and the second level, placing a second set of via patterns between the third set of conductive feature patterns and the second set of conductive feature patterns, and manufacturing the integrated circuit based on at least one of the above patterns of the integrated circuit.
Public/Granted literature
- US20220382951A1 INTEGRATED CIRCUIT, SYSTEM FOR AND METHOD OF FORMING AN INTEGRATED CIRCUIT Public/Granted day:2022-12-01
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