Invention Grant
- Patent Title: Integrated circuit chip having BS-PDN structure
-
Application No.: US17228111Application Date: 2021-04-12
-
Publication No.: US11984421B2Publication Date: 2024-05-14
- Inventor: Eunseok Song , Hongjoo Baek , Kyungsuk Oh , Manho Lee , Hyuekjae Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR 20200145241 2020.11.03
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31 ; H01L23/48 ; H01L23/528

Abstract:
An integrated circuit chip includes a substrate having an active surface and a back surface opposite to the active surface; a front-end-of-line (FEOL) structure disposed on the active surface of the substrate; a first back-end-of-line (BEOL) structure disposed on the FEOL structure; an intermediate connection layer disposed under the back surface of the substrate, the intermediate connection layer including a charge storage, and metal posts disposed around the charge storage; and a re-distribution structure layer disposed under the intermediate connection layer.
Public/Granted literature
- US20220139863A1 INTEGRATED CIRCUIT CHIP HAVING BS-PDN STRUCTURE Public/Granted day:2022-05-05
Information query
IPC分类: