- 专利标题: Method for manufacturing resonator
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申请号: US16970019申请日: 2018-12-27
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公开(公告)号: US11984864B2公开(公告)日: 2024-05-14
- 发明人: Liang Li , Xin Lv , Dongsheng Liang
- 申请人: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- 申请人地址: CN Hebei
- 专利权人: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- 当前专利权人: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- 当前专利权人地址: CN Hebei
- 代理机构: Cooper Legal Group, LLC
- 优先权: CN 1811577385.2 2018.12.20
- 国际申请: PCT/CN2018/124355 2018.12.27
- 国际公布: WO2020/124662A 2020.06.25
- 进入国家日期: 2020-08-14
- 主分类号: H03H3/04
- IPC分类号: H03H3/04 ; H03H3/02
摘要:
The disclosure relates to the technical field of semiconductors, and discloses a method for manufacturing a resonator. The method includes: a substrate is pretreated to change a preset reaction rate of a preset region part of the substrate, so that the preset reaction rate of the preset region part is higher than that of a region outside the preset region part; a preset reaction is performed to the substrate to form a sacrificial material part including an upper half part above an upper surface of the substrate and a lower half part below a lower surface of the substrate; a multilayer structure is formed on the sacrificial material part, and includes a lower electrode layer, a piezoelectric layer and an upper electrode layer from bottom to top; and the sacrificial material part is removed.
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