- 专利标题: Semiconductor device and method for manufacturing semiconductor device
-
申请号: US17632503申请日: 2019-10-17
-
公开(公告)号: US11996355B2公开(公告)日: 2024-05-28
- 发明人: Atsushi Maeda , Tatsuya Kawase , Yuji Imoto
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 国际申请: PCT/JP2019/040828 2019.10.17
- 国际公布: WO2021/075016A 2021.04.22
- 进入国家日期: 2022-02-02
- 主分类号: H01L23/053
- IPC分类号: H01L23/053 ; H01L21/52 ; H01L23/498
摘要:
A semiconductor device includes a semiconductor element and a lead part. The semiconductor element is mounted on a circuit pattern provided on an insulating substrate. The lead part has a plate shape and is bonded to the semiconductor element with a first bonding material interposed therebetween. The lead part includes a lead body and a bonding component. The lead body includes an opening part provided corresponding to a mounting position of the semiconductor element. The bonding component is provided in the opening part and on the semiconductor element. The bonding component is bonded at a lower surface thereof to the semiconductor element by the first bonding material and bonded at an outer peripheral part thereof to an inner periphery of the opening part by a second bonding material.
公开/授权文献
信息查询
IPC分类: