Invention Grant
- Patent Title: P-type dipole for P-FET
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Application No.: US18130201Application Date: 2023-04-03
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Publication No.: US11996455B2Publication Date: 2024-05-28
- Inventor: Yongjing Lin , Karla M Bernal Ramos , Shih Chung Chen , Yixiong Yang , Lin Dong , Steven C. H. Hung , Srinivas Gandikota
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/02 ; H01L21/28 ; H01L29/51 ; H01L29/78
Abstract:
Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).
Public/Granted literature
- US20230253466A1 P-TYPE DIPOLE FOR P-FET Public/Granted day:2023-08-10
Information query
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