One object is to provide a semiconductor device capable of reducing loss during turn-on and degradation of forward voltage. A vertical MOSFET includes a semiconductor substrate 2 of a first conductivity type, a first semiconductor layer 1 of the first conductivity type, a second semiconductor layer 16 of a second conductivity type, first semiconductor regions 17 of the first conductivity type, first trenches 31 and a second trench 32, gate electrodes 20 provided in the first trenches 31 via a gate insulating film 19, and a Schottky electrode 29 provided in the second trench 32. The first trenches 31 are provided in a striped pattern, in a plan view and the second trench 32 surrounds the first trenches 31.