- 专利标题： Semiconductor device and a method making the same
-
申请号： US17431148申请日： 2021-03-26
-
公开(公告)号： US12009250B2公开(公告)日： 2024-06-11
- 发明人: Zhan Ying , Qiang Zhang , Yiming Zhu
- 申请人： ChangXin Memory Technologies, Inc.
- 申请人地址： CN Hefei
- 专利权人： Changxin Memory Technologies, Inc.
- 当前专利权人： Changxin Memory Technologies, Inc.
- 当前专利权人地址： CN Hefei
- 代理机构： Sheppard Mullin Richter & Hampton LLP
- 优先权： CN 2010428538.8 2020.05.20
- 国际申请： PCT/CN2021/083119 2021.03.26
- 国际公布： WO2021/232936A 2021.11.25
- 进入国家日期： 2021-08-13
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/308 ; H10B12/00
摘要：
A method for manufacturing a semiconductor structure includes: providing a substrate, the substrate includes a plurality of first trenches and a first pattern having an array of lines each formed between adjacent two of the plurality of first trenches; forming a first dielectric layer to cover at least the sidewalls of each of the lines in the array of the first pattern; and each of the lines in the array of the first pattern is segmented to form elements of a second pattern.
公开/授权文献
- US20230120791A1 A SEMICONDUCTOR DEVICE AND A METHOD MAKING THE SAME 公开/授权日：2023-04-20
信息查询
IPC分类:
