Invention Grant
- Patent Title: Flip flop including serial stack structure transistors
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Application No.: US17712465Application Date: 2022-04-04
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Publication No.: US12015408B2Publication Date: 2024-06-18
- Inventor: Hyunchul Hwang , Minsu Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20210049580 2021.04.16
- Main IPC: H03K3/012
- IPC: H03K3/012 ; H03K3/013 ; H03K3/356

Abstract:
A flip flop includes a precharge circuit configured to charge a first node by bridging a power voltage node and the first node, the charging of the first node by the precharge circuit according to a voltage level of a clock signal, the charging of the first node by the precharge circuit based on at least two PMOS transistors arranged in series, a discharge circuit configured to discharge the first node by bridging the first node and a ground node, the discharging of the first node according to an input signal and the clock signal, and a second node configured to be charged or discharged, the charging and the discharging of the second node according to a voltage level of the first node.
Public/Granted literature
- US20220337231A1 FLIP FLOP INCLUDING SERIAL STACK STRUCTURE TRANSISTORS Public/Granted day:2022-10-20
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