- 专利标题： P-type strained channel in a fin field effect transistor (FinFET) device
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申请号： US18362210申请日： 2023-07-31
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公开(公告)号： US12021143B2公开(公告)日： 2024-06-25
- 发明人: Shahaji B. More , Huai-Tei Yang , Shih-Chieh Chang , Shu Kuan , Cheng-Han Lee
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 分案原申请号： US15922681 2018.03.15
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8234 ; H01L29/10 ; H01L29/16 ; H01L29/161 ; H01L29/66
摘要：
In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.
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