Invention Grant
- Patent Title: Inductor device
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Application No.: US16829112Application Date: 2020-03-25
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Publication No.: US12027298B2Publication Date: 2024-07-02
- Inventor: Hsiao-Tsung Yen , Ka-Un Chan
- Applicant: Realtek Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Locke Lord LLP
- Agent Tim Tingkang Xia, Esq.
- Priority: TW 9106957 2020.03.03
- Main IPC: H01F27/28
- IPC: H01F27/28 ; H01F17/00 ; H01F27/29

Abstract:
An inductor device includes a first trace, a second trace, a third trace, a fourth trace, and a double ring inductor. The first trace is disposed in a first area, and located on a first layer. The second trace is disposed in the first area, coupled to the first trace, and located on a second layer. The third trace is disposed in a second area, and located on the first layer. The fourth trace is disposed in the second area, coupled to the third trace, and located on the second layer. The double ring inductor is disposed on the first layer, located at outer side of the first trace and the third trace, and coupled to the first trace and the third trace.
Public/Granted literature
- US20200312524A1 INDUCTOR DEVICE Public/Granted day:2020-10-01
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