Invention Grant
- Patent Title: Manufacturing method of semiconductor structure
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Application No.: US17846596Application Date: 2022-06-22
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Publication No.: US12027478B2Publication Date: 2024-07-02
- Inventor: Feng-Wei Kuo , Wen-Shiang Liao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- The original application number of the division: US17118017 2020.12.10
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L21/48 ; H01L21/56 ; H01L21/683 ; H01L23/00 ; H01L23/31 ; H01L23/538 ; H01Q1/52 ; H01Q9/04

Abstract:
A method of forming a semiconductor structure includes forming a first redistribution structure including a first conductive pattern. The method further includes placing a die over the first redistribution structure. The method further includes disposing a molding material over the first redistribution structure to surround the die. The method further includes removing a portion of the molding material to form an opening. The method further includes disposing a dielectric material into the opening to form a dielectric member. The method further includes forming a second redistribution structure over the molding material and the dielectric member, wherein the second redistribution structure includes an antenna structure over the dielectric member and electrically connected to the die.
Public/Granted literature
- US20220320022A1 MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE Public/Granted day:2022-10-06
Information query
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