- Patent Title: Semiconductor device having fins and method of fabricating the same
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Application No.: US18070285Application Date: 2022-11-28
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Publication No.: US12027625B2Publication Date: 2024-07-02
- Inventor: Shu-Hao Kuo , Jung-Hao Chang , Chao-Hsien Huang , Li-Te Lin , Kuo-Cheng Ching
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- The original application number of the division: US16141509 2018.09.25
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L21/306 ; H01L21/3065 ; H01L21/311 ; H01L21/762 ; H01L21/8238 ; H01L21/84 ; H01L27/092 ; H01L27/12 ; H01L29/06 ; H01L29/417 ; H01L29/66
Abstract:
A method includes providing a semiconductor structure including a first semiconductor substrate, an insulator layer over the first semiconductor substrate, and a second semiconductor substrate over the insulator layer; patterning the second semiconductor substrate to form a top fin portion over the insulator layer; conformally depositing a protection layer to cover the top fin portion, wherein a first portion of the protection layer is in contact with a top surface of the insulator layer; etching the protection layer to remove a second portion of the protection layer directly over the top fin portion while a third portion of the protection layer still covers a sidewall of the top fin portion; etching the insulator layer by using the third portion of the protection layer as an etch mask; and after etching the insulator layer, removing the third portion of the protection layer.
Public/Granted literature
- US20230089130A1 SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME Public/Granted day:2023-03-23
Information query
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