Invention Grant
- Patent Title: Semiconductor module, power conversion device, and manufacturing method of semiconductor module
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Application No.: US17365053Application Date: 2021-07-01
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Publication No.: US12029017B2Publication Date: 2024-07-02
- Inventor: Ryoichi Kato
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., Ltd.
- Current Assignee: FUJI ELECTRIC CO., Ltd.
- Current Assignee Address: JP Kawasaki
- Agency: HAUPTMAN HAM, LLP
- Priority: JP 20120968 2020.07.14
- Main IPC: H01L23/42
- IPC: H01L23/42 ; H05K7/20
Abstract:
A semiconductor module has a heat conduction section provided between a multilayer substrate, on which semiconductor chips are mounted, and a cooler. The heat conduction section includes a frame and an opening, and the opening has a grease portion which is provided partly in the opening and is in contact with the multilayer substrate and the cooler, and a space portion which is provided between the grease portion and the frame in a partial and band-shaped manner.
Public/Granted literature
- US20220022340A1 SEMICONDUCTOR MODULE, POWER CONVERSION DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR MODULE Public/Granted day:2022-01-20
Information query
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