Invention Grant
- Patent Title: Semiconductor storage device and manufacturing method thereof
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Application No.: US17006656Application Date: 2020-08-28
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Publication No.: US12029034B2Publication Date: 2024-07-02
- Inventor: Yasuhito Yoshimizu
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 20029627 2020.02.25
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L23/48 ; H01L27/11524 ; H01L27/1157 ; H01L27/11582 ; H10B43/27 ; H10B43/35
Abstract:
A semiconductor storage device includes a stacked body, a first columnar portion, a second columnar portion, and second insulating layers. The stacked body includes a plurality of conductive layers and a plurality of first insulating layers alternately stacked in a first direction. The first columnar portion being in a first region, and the second columnar portion being in a second region. The first columnar penetrates the stacked body in the first direction and includes a semiconductor layer. The second columnar portion penetrates the stacked body in the first direction and includes an insulating layer thereon. The second insulating layers are between the second columnar portion and either the conductive layers or the first insulating layers. The insulating layer on the second columnar portion. The second insulating layers are between the insulating layer on the second columnar portion and one of the conductive layers or the first insulating layers.
Public/Granted literature
- US20210265386A1 SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-08-26
Information query
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