Invention Grant
- Patent Title: Semiconductor device having active fin pattern at cell boundary
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Application No.: US18336754Application Date: 2023-06-16
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Publication No.: US12034008B2Publication Date: 2024-07-09
- Inventor: Sanghoon Baek , Jungho Do , Jaewoo Seo , Jisu Yu
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR 20200105218 2020.08.21
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L23/48 ; H01L27/118

Abstract:
A semiconductor device includes a first standard cell disposed on a substrate in a first row and having a first cell height; a second standard cell disposed on the substrate in a second row, adjacent to the first row, second standard cell having a second cell height, different from the first cell height; and a power line extending in a first direction along a boundary between the first standard cell and the second standard cell.
Public/Granted literature
- US20230335559A1 SEMICONDUCTOR DEVICE HAVING ACTIVE FIN PATTERN AT CELL BOUNDARY Public/Granted day:2023-10-19
Information query
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