Invention Grant
- Patent Title: CVD preparation method for minimizing camera module dot defects and product thereof
-
Application No.: US16969572Application Date: 2020-05-15
-
Publication No.: US12034020B2Publication Date: 2024-07-09
- Inventor: Wenzhi Ge , Yiwei Wang , Gang Wang , Kevin Weng , Hirokazu Yajima , Junnan Jiang
- Applicant: HANGZHOU MDK OPTO ELECTRONICS CO., LTD
- Applicant Address: CN Hangzhou
- Assignee: HANGZHOU MDK OPTO ELECTRONICS CO., LTD
- Current Assignee: HANGZHOU MDK OPTO ELECTRONICS CO., LTD
- Current Assignee Address: CN Hangzhou
- Agency: Bayramoglu Law Offices LLC
- Priority: CN 1911060084.7 2019.11.01 CN 1911387147.X 2019.12.30
- International Application: PCT/CN2020/090570 2020.05.15
- International Announcement: WO2021/082400A 2021.05.06
- Date entered country: 2020-08-13
- Main IPC: C23C16/40
- IPC: C23C16/40 ; C23C16/02 ; C23C16/455 ; H01L27/146 ; H04N23/54

Abstract:
A CVD preparation method for minimizing camera module dot defects includes: performing ultrasonic cleaning and drying on a base substrate to obtain a pre-treated base substrate; placing the pre-treated base substrate into a reaction chamber, evacuating, and introducing nitrogen or inert gas to slightly positive pressure; simultaneously introducing precursor I and precursor II at a temperature of 500-700° C. to deposit a low-refractive-index L layer on the base substrate; halting introduction of the precursor I and the precursor II, and purging the reaction chamber with nitrogen or the inert gas; introducing raw gas precursor III and precursor IV at a temperature of 600-800° C. to deposit a high-refractive-index H layer on the low-refractive-index L layer; and halting introduction of the precursor III and precursor IV, and purging the reaction chamber with nitrogen or inert gas; and cooling to room temperature to obtain an optical element with coating films having different refractive indices.
Public/Granted literature
- US20220302193A1 CVD PREPARATION METHOD FOR MINIMIZING CAMERA MODULE DOT DEFECTS AND PRODUCT THEREOF Public/Granted day:2022-09-22
Information query
IPC分类: