- 专利标题: Nitride films with improved etch selectivity for 3D NAND integration
-
申请号: US17291605申请日: 2019-10-08
-
公开(公告)号: US12040180B2公开(公告)日: 2024-07-16
- 发明人: Pramod Subramonium , Nagraj Shankar , Malay Milan Samantaray , Katsunori Yoshizawa , Bart J. VanSchravendijk
- 申请人: Lam Research Corporation
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Penilla IP, APC
- 国际申请: PCT/US2019/055262 2019.10.08
- 国际公布: WO2020/096722A 2020.05.14
- 进入国家日期: 2021-05-05
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/311 ; H01L21/768 ; H10B41/27 ; H10B41/35 ; H10B43/27 ; H10B43/35
摘要:
A method for depositing a nitride layer over an oxide layer to form an oxide-nitride stack is provided. The method includes supplying an inert gas to a plasma enhanced chemical vapor deposition (PECVD) reactor that supports a substrate having said oxide layer. Then, providing power to an electrode of the PECVD reactor, where the power is configured to strike a plasma. Then, flowing reactant gases into the PECVD reactor. The reactant gases include a first percentage by volume of ammonia (NH3), a second percentage by volume of nitrogen (N2), a third percentage by volume of silane (SiH4) and a fourth percentage by volume of an oxidizer. The fourth percentage by volume of said oxidizer is at least 0.5 percent by volume and less than about 8 percent by volume. Then, continuing to flow the reactant gases into the PECVD reactor until the nitride layer is determined to achieve a target thickness over the oxide layer.
公开/授权文献
信息查询
IPC分类: