- 专利标题： 3D devices with 3D diffusion breaks and method of forming the same
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申请号： US17480336申请日： 2021-09-21
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公开(公告)号： US12040236B2公开(公告)日： 2024-07-16
- 发明人: H. Jim Fulford , Mark I. Gardner
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/8238 ; H01L29/06 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/78
摘要：
A method of microfabrication is provided. The method includes forming shell structures above a first layer including a first semiconductor material. The shell structures are electrically isolated from each other and electrically isolated from the first layer. The shell structures include at least one type of semiconductor material and each include a dielectric core structure. Each shell structure is configured to include a top source/drain (S/D) region, a channel region and a bottom S/D region serially connected in a vertical direction perpendicular to the first layer and have a current flow path in the vertical direction. A bottom contact structure connected to a respective bottom S/D region of each shell structure is formed. A gate structure is formed on a sidewall of a respective channel region of each shell structure.
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