Invention Grant
- Patent Title: Light emitting diode panel and method for manufacturing the light emitting diode panel
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Application No.: US17515727Application Date: 2021-11-01
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Publication No.: US12040320B2Publication Date: 2024-07-16
- Inventor: Sangmin Shin , Hoseop Lee , Sangyoung Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR 20180010895 2018.01.29
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L25/075 ; H01L27/15 ; H01L27/12 ; H01L33/62

Abstract:
A light emitting diode (LED) panel is provided. The LED panel includes a thin-film transistor (TFT) backplane which includes an insulator film disposed on a top surface of a substrate, a plurality of organic films disposed on a top surface of the insulator film, and pixel electrodes disposed on a top surface of each of the plurality of organic films. The LED panel further includes a plurality of LEDs respectively bonded to the pixel electrodes disposed on the top surface of each of the plurality of organic films, wherein the plurality of organic films has the different heights according to a type of each of the plurality of LEDs respectively bonded to the pixel electrodes disposed on the top surface of each of the plurality of organic films.
Public/Granted literature
- US20220085266A1 LIGHT EMITTING DIODE PANEL AND METHOD FOR MANUFACTURING THE LIGHT EMITTING DIODE PANEL Public/Granted day:2022-03-17
Information query
IPC分类: