- 专利标题: Stacked inductor device
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申请号: US17035914申请日: 2020-09-29
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公开(公告)号: US12046403B2公开(公告)日: 2024-07-23
- 发明人: Hsiao-Tsung Yen , Ka-Un Chan
- 申请人: Realtek Semiconductor Corporation
- 申请人地址: TW Hsinchu
- 专利权人: REALTEK SEMICONDUCTOR CORPORATION
- 当前专利权人: REALTEK SEMICONDUCTOR CORPORATION
- 当前专利权人地址: TW Hsinchu
- 代理机构: Locke Lord LLP
- 代理商 Tim Tingkang Xia, Esq.
- 优先权: TW 9115627 2020.05.11
- 主分类号: H01F27/28
- IPC分类号: H01F27/28 ; H01F17/00 ; H01F27/29
摘要:
A stacked inductor device including an 8-shaped inductor structure a stacked coil. The 8-shaped inductor structure includes a first coil and a second coil. The first coil is disposed in a first area. The first coil includes a first sub-coil and a second sub-coil, and the first sub-coil and the second sub-coil are disposed with an interval circularly with each other. The second coil is disposed in a second area, and the second coil is coupled with the first coil on a boundary between the first area and the second area. The second coil includes a third sub-coil and a fourth sub-coil, and the third sub-coil and the fourth sub-coil are disposed with an interval circularly with each other. The stacked coil is coupled to the first coil and the second coil and is stacked partially on or under the first coil and the second coil.
公开/授权文献
- US20210350972A1 STACKED INDUCTOR DEVICE 公开/授权日:2021-11-11
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