发明授权
- 专利标题: Manufacturing method of three-dimensional semiconductor device including contact plugs
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申请号: US17464439申请日: 2021-09-01
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公开(公告)号: US12046512B2公开(公告)日: 2024-07-23
- 发明人: Nam Jae Lee
- 申请人: SK hynix Inc.
- 申请人地址: KR Icheon-si
- 专利权人: SK hynix Inc.
- 当前专利权人: SK hynix Inc.
- 当前专利权人地址: KR Icheon-si
- 代理机构: WILLIAM PARK & ASSOCIATES LTD.
- 优先权: KR 20140067598 2014.06.03
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L29/78 ; H10B41/27 ; H10B41/35 ; H10B41/50 ; H10B43/27 ; H10B43/35
摘要:
A semiconductor device may comprise a plurality of conductive lines and a plurality of contact plugs. The plurality of conductive lines may include a first conductive line a second conductive line. The plurality of contact plugs may include a first contact plug and a second contact plug. The first contact plug may have a first pillar portion and a first protruding portion protruding from a sidewall of the first pillar portion at a first depth, so as to be in alignment and contact with a sidewall of the first conductive line. The second contact plug may have a second pillar portion and a second protruding portion protruding from a sidewall of the second pillar portion at a second depth, so as to be in alignment and contact with a sidewall of the second conductive line.
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