A method for separating semiconductor dies of a semiconductor die assembly comprises depositing a first coating on a first surface of the assembly. The assembly comprises a die wafer having a plurality of semiconductor dies and first and second surfaces. A first portion of the die wafer and the first coating is removed between adjacent semiconductor dies to form trenches having an intermediate depth in the die wafer between first and second surfaces such that die corners are formed on either side of the trenches. A protective coating is deposited on the first surface of the die assembly to cover the die corners, trenches and at least a portion of the first coating. The first coating is selectively removed such that portions of the protective coating covering die corners and trenches remain on the die wafer. Adjacent semiconductor dies are separated and the protective coating remains covering the die corners.