发明授权
- 专利标题: Three dimensional MIM capacitor having a comb structure and methods of making the same
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申请号: US18109108申请日: 2023-02-13
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公开(公告)号: US12046550B2公开(公告)日: 2024-07-23
- 发明人: Paul Yang , Tsun-Kai Tsao , Sheng-Chau Chen , Sheng-Chan Li , Cheng-Yuan Tsai
- 申请人: Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人: Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址: TW Hsinchu
- 代理机构: The Marbury Law Group, PLLC
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L21/768 ; H01L23/532 ; H01L49/02
摘要:
Metal-insulator-metal (MIM) capacitor, an integrated semiconductor device having a MIM capacitor and methods of making. The MIM capacitor includes a first metal layer, a second metal layer and a dielectric layer located between the second metal layer and the first metal layer. The first metal layer, the second metal layer and the dielectric layer may be formed in a comb structure, wherein the comb structure include a first tine structure and at least a second tine structure.
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