Invention Grant
- Patent Title: Stacked semiconductor devices and methods of forming thereof
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Application No.: US17387525Application Date: 2021-07-28
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Publication No.: US12051624B2Publication Date: 2024-07-30
- Inventor: Tsung-Hsing Lu , Jun He , Li-Huan Chu , Pei-Haw Tsao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: HAYNES AND BOONE, LLP
- The original application number of the division: US16559302 2019.09.03
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L21/304 ; H01L21/768 ; H01L21/78 ; H01L23/00 ; H01L25/00
Abstract:
A semiconductor structure includes a first device and a second device bonded on the first device. The first device has a first sidewall distal to the second device and a second sidewall proximal to the second device. A surface roughness of the second sidewall is larger than a surface roughness of the first sidewall.
Public/Granted literature
- US20210358808A1 Dicing Method for Stacked Semiconductor Devices Public/Granted day:2021-11-18
Information query
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