Invention Grant
- Patent Title: Crystalline semiconductor layer formed in BEOL processes
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Application No.: US18167776Application Date: 2023-02-10
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Publication No.: US12051702B2Publication Date: 2024-07-30
- Inventor: Matthias Passlack , Blandine Duriez , Georgios Vellianitis , Gerben Doornbos , Marcus Johannes Henricus Van Dal , Martin Christopher Holland , Mauricio Manfrini
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/02 ; H01L29/66 ; H01L29/786
Abstract:
A crystalline channel layer of a semiconductor material is formed in a backend process over a crystalline dielectric seed layer. A crystalline magnesium oxide MgO is formed over an amorphous inter-layer dielectric layer. The crystalline MgO provides physical link to the formation of a crystalline semiconductor layer thereover.
Public/Granted literature
- US20230197445A1 CRYSTALLINE SEMICONDUCTOR LAYER FORMED IN BEOL PROCESSES Public/Granted day:2023-06-22
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