发明授权
- 专利标题： Anti-ferroelectric thin-film structure and electronic device including the same
-
申请号： US17702155申请日： 2022-03-23
-
公开(公告)号： US12051717B2公开(公告)日： 2024-07-30
- 发明人: Boeun Park , Yongsung Kim , Jeonggyu Song , Jooho Lee
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd
- 当前专利权人： Samsung Electronics Co., Ltd
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR 20210096717 2021.07.22
- 主分类号： H10B53/00
- IPC分类号： H10B53/00 ; H01L49/02
摘要：
An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.
公开/授权文献
信息查询
