- 专利标题： Method of dopant deactivation underneath gate
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申请号： US17229206申请日： 2021-04-13
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公开(公告)号： US12068374B2公开(公告)日： 2024-08-20
- 发明人: Dhanyakumar Mahaveer Sathaiya , Kai-Chieh Yang , Ken-Ichi Goto , Wei-Hao Wu , Yuan-Chen Sun , Zhiqiang Wu
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Hauptman Ham, LLP
- 分案原申请号： US16202796 2018.11.28
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/16 ; H01L29/66 ; H01L29/78 ; H01L21/265
摘要：
A method of fabricating a device on a substrate includes doping a channel region of the device with dopants. The method further includes growing an undoped epitaxial layer over the channel region, wherein growing the undoped epitaxial layer comprises deactivating dopants in the channel region to form a deactivated region. The method further includes forming a gate structure over the deactivated region.
公开/授权文献
- US20210234003A1 METHOD OF DOPANT DEACTIVATION UNDERNEATH GATE 公开/授权日：2021-07-29
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