- 专利标题: Plating system and method of plating wafer
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申请号: US18138346申请日: 2023-04-24
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公开(公告)号: US12071701B2公开(公告)日: 2024-08-27
- 发明人: Kuo-Lung Hou , Ming-Hsien Lin
- 申请人: Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人: Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Cooper Legal Group, LLC
- 分案原申请号: US17308347 2021.05.05
- 主分类号: C25D21/12
- IPC分类号: C25D21/12 ; C25D5/54 ; C25D7/12 ; C25D17/00 ; C25D17/02
摘要:
A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.
公开/授权文献
- US20230257901A1 PLATING SYSTEM AND METHOD OF PLATING WAFER 公开/授权日:2023-08-17
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