Invention Grant
- Patent Title: Graphene transistor and method of manufacturing same
-
Application No.: US17403915Application Date: 2021-08-17
-
Publication No.: US12072313B2Publication Date: 2024-08-27
- Inventor: Naruto Miyakawa , Ayumi Shinagawa , Shota Ushiba , Masahiko Kimura , Kazuhiko Matsumoto , Takao Ono
- Applicant: Murata Manufacturing Co., Ltd. , OSAKA UNIVERSITY
- Applicant Address: JP Nagaokakyo
- Assignee: MURATA MANUFACTURING CO., LTD.,OSAKA UNIVERSITY
- Current Assignee: MURATA MANUFACTURING CO., LTD.,OSAKA UNIVERSITY
- Current Assignee Address: JP Kyoto; JP Osaka
- Agency: Keating & Bennett, LLP
- Priority: JP 19029080 2019.02.21
- Main IPC: H01L23/00
- IPC: H01L23/00 ; G01N27/414 ; H01L29/16

Abstract:
A graphene transistor includes a graphene layer including at least one sheet of graphene, a drain electrode and a source electrode each electrically connected to the graphene layer, a charge donor on at least one main surface of the graphene layer, the charge donor including an impurity charge, and a counter ion having a charge with a sign different from a sign of the impurity charge.
Public/Granted literature
- US20210372966A1 GRAPHENE TRANSISTOR AND METHOD OF MANUFACTURING SAME Public/Granted day:2021-12-02
Information query
IPC分类: