- 专利标题: Direct semiconductor solar devices
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申请号: US17763980申请日: 2020-07-13
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公开(公告)号: US12074241B2公开(公告)日: 2024-08-27
- 发明人: Ian Ferguson , Corey E. Lerner , Chuanle Zhou
- 申请人: Columbus Photovoltaics LLC
- 申请人地址: US NY Rego Park
- 专利权人: Columbus Photovoltaics LLC
- 当前专利权人: Columbus Photovoltaics LLC
- 当前专利权人地址: US NY Rego Park
- 代理机构: Lerner David LLP
- 国际申请: PCT/US2020/041755 2020.07.13
- 国际公布: WO2021/066920A 2021.04.08
- 进入国家日期: 2022-03-25
- 主分类号: H01L31/07
- IPC分类号: H01L31/07 ; H01L31/02 ; H01L31/0224 ; H01L31/0304 ; H01L31/078
摘要:
A photovoltaic cell includes a semiconductor element (20) formed from a direct semiconductor and a transparent biasing agent (28) overlying a first portion of the front face (22) of the semiconductor, the biasing agent producing a first depletion region (30) in the semiconductor element. A collector (40) directly contacts a second portion of the front face. The collector produces a second depletion region (44) in the semiconductor element. The collector (40) is out of direct conductive contact with the biasing agent (28) but in proximity to the biasing agent. A continuous region at least partially depleted of majority carriers extends between the first and second depletion regions at the front face of the semiconductor element. The continuous region may include overlapping portions of the first and second depletion regions (30,44), or may include an additional depletion region (160) formed by a charged dielectric (147).
公开/授权文献
- US20220376127A1 Improvements in Direct Semiconductor Solar Devices 公开/授权日:2022-11-24
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