Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US17951482Application Date: 2022-09-23
-
Publication No.: US12074738B2Publication Date: 2024-08-27
- Inventor: Jahoon Jin , Kyunghwan Min , Soomin Lee , Sang-Ho Kim , Jihoon Lim , Sodam Ju , Hyun Su Chea
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20210165139 2021.11.26 KR 20220027922 2022.03.04
- Main IPC: H04L25/03
- IPC: H04L25/03 ; H04B1/16 ; H04L1/20 ; H04L7/00

Abstract:
A semiconductor device including a comparison circuit configured to receive an input signal having n signal levels, where n is a natural number equal to or greater than three, and output n−1 first signals having two signal levels. The device includes a jitter compensation circuit configured to receive the n−1 first signals and compensate for at least one of a length of a period in which a signal level of at least one of the n−1 first signals transitions from a first signal level to a second signal level different from the first signal level, and a length of a period in which the signal level of the at least one of the n−1 first signals transitions from the second signal level to the first signal level, to output n−1 second signals.
Public/Granted literature
- US20230171134A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-06-01
Information query