- 专利标题： Electromagnetic shielding structure for a semiconductor device and a method for manufacturing the same
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申请号： US18173840申请日： 2023-02-24
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公开(公告)号： US12080656B2公开(公告)日： 2024-09-03
- 发明人: Jen-Yuan Chang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Harrity & Harrity, LLP
- 分案原申请号： US17301327 2021.03.31
- 主分类号： H01L23/552
- IPC分类号： H01L23/552 ; H01L23/52
摘要：
A semiconductor device includes an inductance structure and a shielding structure. The shielding structure is arranged to at least partially shield the inductance structure from external electromagnetic fields. The shielding structure includes a shielding structure portion arranged along a side of the inductance structure such that the shielding structure portion is around at least a portion of a perimeter of the inductance structure.
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