Invention Grant
- Patent Title: Semiconductor device and memory system
-
Application No.: US17685853Application Date: 2022-03-03
-
Publication No.: US12082340B2Publication Date: 2024-09-03
- Inventor: Yuta Tsubouchi
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 21154443 2021.09.22
- Main IPC: H05K1/18
- IPC: H05K1/18 ; H01L25/065

Abstract:
According to one embodiment, a semiconductor device includes receiving terminals on a surface of a substrate to receive first signals and transmitting terminals on the surface of the substrate to transmit second signals. The transmitting terminals are symmetrically positioned on the surface of the substrate with respect to the receiving terminals at a substantially 90 degree rotation about a rotation center position. The ordering of the transmitting terminals along the surface of the substrate from the rotation center position matches the ordering of the receiving terminals along the surface of the substrate from the rotation center position.
Public/Granted literature
- US20230090795A1 SEMICONDUCTOR DEVICE AND MEMORY SYSTEM Public/Granted day:2023-03-23
Information query