An integrated short channel omega gate FinFET and long channel FinFET semiconductor device includes a first fin and second fin on a buried oxide (BOX) layer. The BOX layer includes a fin well outside and substantially adjoining a footprint of a respective fin. A first gate dielectric layer is upon the second fin and a second gate dielectric layer is upon the first dielectric layer. The BOX layer further includes an undercut below the first fin that exposes a portion of a bottom surface of the first fin. An omega-gate is around the first fin. A tri-gate is upon the second gate dielectric layer over the second fin.