Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17614690Application Date: 2020-05-22
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Publication No.: US12101067B2Publication Date: 2024-09-24
- Inventor: Minato Ito , Hitoshi Kunitake , Takayuki Ikeda
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: NIXON PEABODY LLP
- Agent Jeffrey L. Costellia
- Priority: JP 19106670 2019.06.07
- International Application: PCT/IB2020/054867 2020.05.22
- International Announcement: WO2020/245693A 2020.12.10
- Date entered country: 2021-11-29
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H01L27/12 ; H01L29/786 ; H10B12/00

Abstract:
A semiconductor device that functions as a relay station and is reduced in size is provided. The semiconductor device includes an operational amplifier, a first transistor and a first capacitor that are electrically connected to a first input side of the operational amplifier, and a first resistor and a second resistor that are electrically connected to a second input side. The second resistor is electrically connected to an output side of the operational amplifier, a gate of the first transistor is electrically connected to a first power supply, the first resistor is electrically connected to a second power supply, and at least a transistor included in the operational amplifier has a region overlapping with the first transistor.
Public/Granted literature
- US20220231644A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-07-21
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