- 专利标题： Semiconductor devices and methods of manufacturing thereof
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申请号： US17166558申请日： 2021-02-03
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公开(公告)号： US12107013B2公开(公告)日： 2024-10-01
- 发明人: Shih-Yao Lin , Chih-Han Lin , Shu-Yuan Ku , Shu-Uei Jang , Ya-Yi Tsai , I-Wei Yang
- 申请人： Taiwan Semicondutor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- 当前专利权人地址： TW Hsinchu
- 代理机构： FOLEY & LARDNER LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L27/088
摘要：
A semiconductor device includes a first semiconductor fin extending along a first direction. The semiconductor device includes a second semiconductor fin also extending along the first direction. The semiconductor device includes a dielectric structure disposed between the first and second semiconductor fins. The semiconductor device includes a gate isolation structure vertically disposed above the dielectric structure. The semiconductor device includes a metal gate layer extending along a second direction perpendicular to the first direction, wherein the metal gate layer includes a first portion straddling the first semiconductor fin and a second portion straddling the second semiconductor fin. The gate isolation structure separates the first and second portions of the metal gate layer from each other and includes a bottom portion extending into the dielectric structure.
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