Invention Grant
- Patent Title: Memory bit-cell with stacked and folded planar capacitors
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Application No.: US17653811Application Date: 2022-03-07
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Publication No.: US12108609B1Publication Date: 2024-10-01
- Inventor: Rajeev Kumar Dokania , Amrita Mathuriya , Debo Olaosebikan , Tanay Gosavi , Noriyuki Sato , Sasikanth Manipatruni
- Applicant: Kepler Computing Inc.
- Applicant Address: US CA San Francisco
- Assignee: Kepler Computing Inc.
- Current Assignee: Kepler Computing Inc.
- Current Assignee Address: US CA San Francisco
- Agency: MUGHAL GAUDRY & FRANKLIN PC
- Main IPC: H10B53/30
- IPC: H10B53/30 ; G11C11/22

Abstract:
A configuration for efficiently placing a group of capacitors with one terminal connected to a common node is described. The capacitors are stacked and folded along the common node. In a stack and fold configuration, devices are stacked vertically (directly or with a horizontal offset) with one terminal of the devices being shared to a common node, and further the capacitors are placed along both sides of the common node. The common node is a point of fold. In one example, the devices are capacitors. N number of capacitors can be divided in L number of stack layers such that there are N/L capacitors in each stacked layer. The N/L capacitors are shorted together with an electrode (e.g., bottom electrode). The electrode can be metal, a conducting oxide, or a combination of a conducting oxide and a barrier material. The capacitors can be planar, non-planar or replaced by memory elements.
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