Invention Grant
- Patent Title: Light emitting diode including a quantum dot complex, method of manufacturing the same and display device including the same
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Application No.: US17450151Application Date: 2021-10-06
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Publication No.: US12108616B2Publication Date: 2024-10-01
- Inventor: Yongil Kim
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Priority: KR 20210001988 2021.01.07
- Main IPC: H10K50/115
- IPC: H10K50/115 ; H10K59/122 ; H10K59/38 ; H10K71/00 ; H10K102/00

Abstract:
A light emitting element (e.g., light emitting diode) includes a first electrode, a hole transport region on the first electrode, an emission layer on the hole transport region and containing a quantum dot complex, an electron transport region on the emission layer, and a second electrode on the electron transport region, wherein the quantum dot complex contains two or more quantum dots each including a core and a shell surrounding the core, the shell of one quantum dot is combined with a shell of at least one neighboring quantum dot, and the light emitting element (e.g., light emitting diode) may thus have improved luminous efficiency and service life.
Public/Granted literature
- US20220216442A1 LIGHT EMITTING DIODE, METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE INCLUDING THE SAME Public/Granted day:2022-07-07
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