Invention Grant
- Patent Title: Light-emitting device
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Application No.: US17987188Application Date: 2022-11-15
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Publication No.: US12108658B2Publication Date: 2024-10-01
- Inventor: Shunpei Yamazaki , Satoshi Seo , Nobuharu Ohsawa , Satoko Shitagaki , Hideko Inoue , Hiroshi Kadoma , Harue Osaka , Kunihiko Suzuki , Yasuhiko Takemura
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP 11042120 2011.02.28 JP 11042122 2011.02.28
- Main IPC: H10K85/60
- IPC: H10K85/60 ; H10K101/00 ; H10K101/30

Abstract:
A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.
Public/Granted literature
- US20230079236A1 Light-Emitting Device Public/Granted day:2023-03-16
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