The embodiments of the present disclosure belong to the field of semiconductor manufacturing technology and relates to a method for manufacturing a semiconductor structure and a semiconductor structure. The method for manufacturing the semiconductor structure includes: a bit line structure is formed on a substrate, a fill channel is formed between the insulating structures on two adjacent bit lines; a conductor is formed within the fill channel; at least one slit is formed on the conductor along a direction perpendicular to a longitudinal direction of each of the plurality of bit line to divide the conductor into a plurality of conductive blocks, each of the plurality of conductive blocks is connected to one of transistors on the substrate.