Invention Grant
- Patent Title: Magnetoresistive memory elements for spin-transfer torque (STT) and spin-orbit torque (SOT) random access memories
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Application No.: US17675876Application Date: 2022-02-18
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Publication No.: US12114578B2Publication Date: 2024-10-08
- Inventor: Roman Chepulskyy , Dmytro Apalkov
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H10B61/00 ; H10N50/85

Abstract:
A magnetoresistive tunnel-junction (MTJ) memory element includes a magnetic reference layer (RL), a magnetic free layer (FL), a tunneling barrier layer, which extends between the magnetic RL and the magnetic FL, and a diffusion-blocking layer (DBL), which extends on the magnetic FL. The includes at least one material selected from a group consisting of bismuth (Bi), antimony (Sb), osmium (Os), rhenium (Re), tin (Sn), rhodium (Rh), indium (In), and cadmium (Cd). An oxide capping layer is also provided on the DBL. The oxide layer may include at least one of strontium (Sr), scandium (Sc), beryllium (Be), calcium (Ca), yttrium (Y), zirconium (Zr), and hafnium (Hf).
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