- 专利标题: Method and apparatus of evaluating quality of wafer or single crystal ingot
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申请号: US17647388申请日: 2022-01-07
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公开(公告)号: US12118706B2公开(公告)日: 2024-10-15
- 发明人: Hyun Woo Park
- 申请人: SK SILTRON CO., LTD.
- 申请人地址: KR Gumi-si
- 专利权人: SK SILTRON CO., LTD.
- 当前专利权人: SK SILTRON CO., LTD.
- 当前专利权人地址: KR Gumi-si
- 代理机构: Lewis Roca Rothgerber Christie LLP
- 优先权: KR 20210012285 2021.01.28
- 主分类号: G06T7/00
- IPC分类号: G06T7/00 ; G01N21/95 ; G06N5/022 ; G06T3/00 ; G06T7/11
摘要:
A method of evaluating quality of a wafer or an apparatus of evaluating quality of a wafer may include: performing a copper-haze evaluation on a piece of wafer or a single crystal ingot; collecting copper-haze map data and a copper-haze evaluation score based on a result of the copper-haze evaluation; training an artificial intelligence model based on the copper-haze map data and the copper-haze evaluation score; and performing crystal defect evaluation on the piece of the wafer or the single crystal ingot using the learned artificial intelligence model that outputs the copper-haze evaluation score when the copper-haze map data is input.
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