Invention Grant
- Patent Title: Film forming method, method for manufacturing semiconductor device, film forming device, and system for manufacturing semiconductor device
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Application No.: US17594029Application Date: 2020-03-26
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Publication No.: US12119219B2Publication Date: 2024-10-15
- Inventor: Hiroaki Ashizawa , Hideo Nakamura , Yosuke Serizawa , Yoshikazu Ideno
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Armstrong Teasdale LLP
- Priority: JP 19075480 2019.04.11
- International Application: PCT/JP2020/013597 2020.03.26
- International Announcement: WO2020/209081A 2020.10.15
- Date entered country: 2021-09-30
- Main IPC: H01L21/31
- IPC: H01L21/31 ; C23C16/34 ; C23C16/44 ; C23C16/455 ; C23C16/458 ; C23C16/46 ; C23C16/52 ; H01L21/02
Abstract:
A method of forming a group V metal nitride film on a substrate includes: providing the substrate within a processing container; and forming the group V metal nitride film on the substrate by alternately supplying, into the processing container, a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas.
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