Invention Grant
- Patent Title: Bonding structure and method of forming same
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Application No.: US18303302Application Date: 2023-04-19
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Publication No.: US12119318B2Publication Date: 2024-10-15
- Inventor: Hsien-Wei Chen , Jie Chen , Ming-Fa Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US17522521 2021.11.09
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/18 ; H01L21/768 ; H01L23/373 ; H01L23/48 ; H01L23/532 ; H01L33/00

Abstract:
A device includes an interconnect structure over a substrate, multiple first conductive pads over and connected to the interconnect structure, a planarization stop layer extending over the sidewalls and top surfaces of the first conductive pads of the multiple first conductive pads, a surface dielectric layer extending over the planarization stop layer, and multiple first bonding pads within the surface dielectric layer and connected to the multiple first conductive pads.
Public/Granted literature
- US20230253354A1 Bonding Structure and Method of Forming Same Public/Granted day:2023-08-10
Information query
IPC分类: