Low resistance approaches for fabricating contacts, and semiconductor structures having low resistance metal contacts, are described. In an example, an integrated circuit structure includes a semiconductor structure above a substrate. A gate electrode is over the semiconductor structure, the gate electrode defining a channel region in the semiconductor structure. A first semiconductor source or drain structure is at a first end of the channel region at a first side of the gate electrode. A second semiconductor source or drain structure is at a second end of the channel region at a second side of the gate electrode, the second end opposite the first end. A source or drain contact is directly on the first or second semiconductor source or drain structure, the source or drain contact including a barrier layer and an inner conductive structure.