- 专利标题: Three-dimensional flash memory having improved degree of integration, and manufacturing method therefor
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申请号: US17432473申请日: 2020-01-28
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公开(公告)号: US12120872B2公开(公告)日: 2024-10-15
- 发明人: Yunheub Song
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Muir Patent Law, PLLC
- 优先权: KR 20190022149 2019.02.26 KR 20190022150 2019.02.26
- 国际申请: PCT/KR2020/001274 2020.01.28
- 国际公布: WO2020/175805A 2020.09.03
- 进入国家日期: 2021-08-19
- 主分类号: H10B43/27
- IPC分类号: H10B43/27 ; H10B41/27
摘要:
Provided are a 3-dimensional (3D) flash memory with an improved degree of integration and a method of manufacturing the same. The 3D flash memory may include at least one vertical string formed to extend in one direction on a substrate and comprising a channel layer formed to extend in the one direction and a charge storage layer formed to extend in the one direction so as to surround the channel layer; a plurality of electrode layers stacked to be vertically connected to the at least one vertical string; and a source line formed to be buried in the substrate.
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