A semiconductor device includes a semiconductor chip in which a field effect transistor mainly containing GaN is formed on a surface of a SiC semiconductor substrate. The semiconductor device includes a metal base on which a back surface of the semiconductor chip is mounted through a conductive adhesive material containing Ag and a resin mold configured to seal the semiconductor chip. A metal having wettability lower than wettability of Au or Cu with respect to Ag is exposed in a region extending along an edge of the back surface.