- 专利标题: Method of manufacturing integrated circuit device
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申请号: US17874512申请日: 2022-07-27
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公开(公告)号: US12127396B2公开(公告)日: 2024-10-22
- 发明人: Hyunji Song , Jaehoon Kim , Kwangho Park , Yonghoon Son , Gyeonghee Lee , Seungjae Jung
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Muir Patent Law, PLLC
- 优先权: KR 20190143655 2019.11.11
- 主分类号: H10B12/00
- IPC分类号: H10B12/00
摘要:
An integrated circuit device includes a plurality of semiconductor layers stacked on a substrate to overlap each other in a vertical direction and longitudinally extending along a first horizontal direction. The plurality of semiconductor layers may have different thicknesses in the vertical direction.
公开/授权文献
- US20220359530A1 METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE 公开/授权日:2022-11-10
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