Invention Grant
- Patent Title: Method of manufacturing integrated circuit device
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Application No.: US17874512Application Date: 2022-07-27
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Publication No.: US12127396B2Publication Date: 2024-10-22
- Inventor: Hyunji Song , Jaehoon Kim , Kwangho Park , Yonghoon Son , Gyeonghee Lee , Seungjae Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20190143655 2019.11.11
- Main IPC: H10B12/00
- IPC: H10B12/00

Abstract:
An integrated circuit device includes a plurality of semiconductor layers stacked on a substrate to overlap each other in a vertical direction and longitudinally extending along a first horizontal direction. The plurality of semiconductor layers may have different thicknesses in the vertical direction.
Public/Granted literature
- US20220359530A1 METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE Public/Granted day:2022-11-10
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